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Triple‐band CMOS voltage‐controlled oscillator
Author(s) -
Jang ShengLyang,
Chen YaoTsu,
Chang ChiaWei,
Juang MiinHorng
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27431
Subject(s) - voltage controlled oscillator , resonator , phase noise , lc circuit , electrical engineering , cmos , resonance (particle physics) , optoelectronics , materials science , helical resonator , voltage , transistor , microwave , physics , telecommunications , engineering , capacitor , particle physics
A low‐phase noise triple‐band voltage‐controlled oscillator (VCO) is proposed and it consists of a triple‐resonance LC resonator and a cross‐coupled switching transistor pair. In the proposed VCO that uses the triple‐resonance LC‐resonator, band switching is achieved by tuning the varactors in the resonator without using lossy switches in the resonator path. The triple‐resonance LC resonator comprises a parallel‐tuned LC resonator and two series resonant resonators. The proposed VCO has been implemented with the TSMC 0.18 μm 1P6M CMOS technology and the core power consumption is 3.12 mW at the dc drain–source bias of 0.8 V. The VCO can generate differential signals in the frequency range of 6.651∼7.146 GHz, 5.607∼5.941 GHz, and 3.15 GHz∼3.483 GHz. The die area of the triple‐band VCO is 0.684 × 0.754 mm 2 . © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:737–740, 2013; View this article online at wileyonlinelibrary.com. DOI: 10.1002/mop.27431