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A 24/77‐GHz SiGe BiCMOS transmitter chipset for automotive radar
Author(s) -
Giammello Vittorio,
Ragonese Egidio,
Palmisano Giuseppe
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27425
Subject(s) - chipset , transmitter , electrical engineering , bicmos , microwave , radar , engineering , wideband , transmitter power output , radio frequency power transmission , voltage controlled oscillator , electronic engineering , telecommunications , chip , voltage , transistor , cmos , amplifier , channel (broadcasting)
This article presents a 24/77‐GHz transmitter chipset for automotive radar sensors implemented in a 160/175‐GHz f T /f max SiGe BiCMOS technology. The chipset adopts a dual‐band architecture consisting of a 24‐GHz section for ultra‐wideband short‐range radar operation, which is also exploited to drive the 77‐GHz long‐range radar transmitter front‐end. The proposed design adopts a single 24‐GHz frequency synthesizer to implement both radar operation modes. The transmitter chipset is able to deliver a maximum output power of 3 dBm and 12 dBm at 24 GHz and 77 GHz, respectively. The 24‐GHz transmitter demonstrates to operate with pulse widths of 0.5 ns and 1 ns in compliance with the transmission mask designed by ETSI. The 77‐GHz transmitter exhibits a power gain of 20 dB, an output power of 12 dBm, and an output referred 1‐dB compression point of 9.5 dBm, while drawing 155 mA from a 2.5‐V supply voltage. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:782–786, 2013; View this article online at wileyonlinelibrary.com. DOI: 10.1002/mop.27425
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