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A dual‐band cross‐coupled oscillator using the varactor‐switching mode technique
Author(s) -
Jang ShengLyang,
Chen YaoTsu,
Lin YuSheng,
Chang ChiaWei,
Huang JhinFang
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27368
Subject(s) - voltage controlled oscillator , varicap , electrical engineering , figure of merit , dbc , oscillation (cell signaling) , bicmos , lc circuit , multi band device , microwave , electronic oscillator , voltage , engineering , optoelectronics , physics , phase noise , telecommunications , transistor , capacitor , capacitance , chemistry , electrode , biochemistry , quantum mechanics , antenna (radio)
A dual‐band cross‐coupled oscillator is proposed to operate at 5 and 9 GHz. The oscillator consists of two cross‐coupled BiCMOS oscillators with shared series‐tuned LC‐tank. In the even‐mode, the series‐tuned LC‐tank takes no part in affecting the oscillation frequency, whereas in the odd‐mode, the series‐tuned LC‐tank plays the role in the oscillation frequency. The proposed oscillator has been implemented with the TSMC 0.18 μm SiGe BiCMOS technology and the core power consumption is 2.6 mW at the supply voltage of 0.7 V. The figure of merit is −192/−190 dBc/Hz at high‐/low‐band. The die area of the dual‐band VCO is 1.04 × 0.755 mm 2 . © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:485–488, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27368