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Low voltage‐low power full‐band UWB receiver front‐end
Author(s) -
Lee JiYoung,
Yun TaeYeoul
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27299
Subject(s) - electrical engineering , low noise amplifier , noise figure , low voltage , impedance matching , cmos , voltage , flicker noise , wideband , rf front end , noise (video) , amplifier , electronic engineering , electrical impedance , engineering , radio frequency , computer science , artificial intelligence , image (mathematics)
This article proposes a low‐voltage, low‐power, low‐noise, wideband receiver front‐end consisting of a low‐noise amplifier (LNA) and a mixer. The LNA stage uses a current‐reuse technique for low‐power consumption and high gain. A switched biasing technique is then used to reduce the flicker noise of the mixer. A bulk injection structure is adopted for low‐voltage operation of the mixer. The proposed receiver front‐end achieves input impedance matching of less than −10 dB from 3.1 to 10.6 GHz, a minimum noise figure of 4.9 dB, and a maximum power gain of 17.7 dB while consuming 8.25 mW from 6.87 mA and 1.2 V. This receiver front‐end is fabricated using a 0.18‐μm CMOS process. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:278–281, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27299

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