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An injection‐locked frequency quadrupler in 90 nm CMOS technology
Author(s) -
Chang ChiaWei,
Jang ShengLyang
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27291
Subject(s) - varicap , electrical engineering , frequency multiplier , frequency divider , cmos , injection locking , engineering , transformer , microwave , voltage controlled oscillator , balun , phase locked loop , voltage , electronic engineering , phase noise , physics , electrode , telecommunications , capacitance , laser , optics , quantum mechanics , antenna (radio)
On‐chip high‐frequency frequency sources suffer from quality (Q)‐factor degradation of varactors.Injection‐locked frequency multipliers allow the design of oscillators running at a frequency lower than required to take the advantage of higher Q‐factor varactor. This article proposes a fully integrated CMOS LC‐tank injection‐locked frequency quadrupler fabricated in the TSMC 90 nm RF‐CMOS process and describes the circuit design, operation principle, and measurement results of the quadrupler. The injection‐locked frequency quadrupler comprises a first‐harmonic injection‐locked oscillator with dual‐injection ports, two frequency doublers and a transformer balun. At the supply voltage of 0.7 V, the dc power consumption is 9.1 mW. At the incident power of 0 dBm, the injection‐locked frequency quadrupler can provide an output signal with the frequency from 24 to 29.6 GHz, while the frequency of the injection signal varies from 6 to 7.4 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:266–269, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27291