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Use of volterra‐series in optimizing harmonic load impedance for suppressing IM3 in LTE InGaP HBT power amplifiers
Author(s) -
Zhang Xiaodong,
Gao Huai,
Li G.P.
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27286
Subject(s) - intermodulation , heterojunction bipolar transistor , amplifier , volterra series , linearity , electronic engineering , total harmonic distortion , electrical impedance , electrical engineering , distortion (music) , rf power amplifier , nonlinear distortion , harmonic , power (physics) , series (stratigraphy) , materials science , engineering , nonlinear system , physics , acoustics , transistor , cmos , bipolar junction transistor , voltage , paleontology , quantum mechanics , biology
The nonlinear distortion in InGaP/GaAs HBT power amplifiers for long‐term evolution applications is analyzed using Volterra series. The interdependence between third‐order intermodulation (IM3) and harmonic load impedance suggests an alternative technique to improve PAs' linearity. The measurement results show that IM3 is suppressed by more than 6 dB, whereas other performances are not affected. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:341–344, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27286