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An absorptive bandpass‐integrated p‐i‐n diode T/R switch for 2.5 GHz WiMAX high power terminals
Author(s) -
Phudpong Ravipat,
Youngthanisara Narit,
Kukieattikool Pratana,
Kitjaroen Matanee,
Siwamogsatham Siwaruk
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27210
Subject(s) - band pass filter , insertion loss , electrical engineering , capacitance , diode , microwave , inductance , wimax , varicap , optoelectronics , bandwidth (computing) , return loss , materials science , physics , engineering , wireless , telecommunications , voltage , antenna (radio) , electrode , quantum mechanics
This article presents a new technique for a transmit/receive (T/R) switch, which originally consists of p‐i‐n diodes and quarterwave lines. By using a reverse‐biased capacitance of the p‐i‐n diodes and additional inductive components, the conventional T/R switch can be made to incorporate a function of a bandpass filter. The filter response can be theoretically designed by configuring the inductance and capacitance values. In this article, an absorptive bandpass‐integrated p‐i‐n diode T/R switch is presented. It achieves a bandpass response at 2.5 GHz with a bandwidth of 450 MHz and an insertion loss of 2.3 dB. It offers high return loss and high isolation, 20 and 50 dB, respectively, and can tolerate power up to 20 W. This filter‐integrated switch could be used as a T/R switch for high power time division duplex systems such as WiMAX in the 2.3–2.7 GHz frequency band. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2705–2708, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27210