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1‐6 GHz 4 W MMIC GaAs high power amplifier
Author(s) -
Pingue Massimiliano,
Orobello Barbara,
Diciomma Rossella,
Pisa Stefano
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27208
Subject(s) - monolithic microwave integrated circuit , amplifier , electrical engineering , power (physics) , materials science , microwave , transistor , fet amplifier , optoelectronics , substrate (aquarium) , power gain , dbm , engineering , rf power amplifier , telecommunications , physics , cmos , oceanography , quantum mechanics , voltage , geology
This article presents the design of a monolithic high power amplifier with 4 W output power in the 1–6 GHz band (2.5 octave).The amplifier uses two gain stages composed by four and eight transistors. Power united monolithic semiconductor PPH25x process, on GaAs substrate with 70 μm thickness, has been used. The Montecarlo analysis shows a small‐signal gain's average value of 24 dB and output power levels higher than 36 dBm. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2747–2751, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27208