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SOS junctionless MOSFETs vs. inversion channel MOSFETs: Doubling the device speed without changing the technology
Author(s) -
Bertling K.,
Rakic A.D.,
Yeow Y. T.,
O'Brien C. J.,
Domyo H.
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27163
Subject(s) - mosfet , cutoff frequency , electrical engineering , electronic engineering , microwave , optoelectronics , inversion (geology) , materials science , engineering , telecommunications , transistor , voltage , paleontology , structural basin , biology
This letter compares experimentally the performance of the SOS junctionless MOSFET and the conventional SOS inversion‐channel MOSFET, fabricated in a production line technology. It was shown that the former has a significantly higher cutoff frequency f T , and therefore presents a viable alternative to a conventional SOS MOSFETs for high‐speed integrated circuits. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2755–2757, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27163