SOS junctionless MOSFETs vs. inversion channel MOSFETs: Doubling the device speed without changing the technology | Zendy

Bertling K. | Zendy; Rakic A.D. | Zendy; Yeow Y. T. | Zendy; O'Brien C. J. | Zendy; Domyo H. | Zendy

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SOS junctionless MOSFETs vs. inversion channel MOSFETs: Doubling the device speed without changing the technology

Author(s) -

Bertling K.,

Rakic A.D.,

Yeow Y. T.,

O'Brien C. J.,

Domyo H.

Publication year - 2012

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.27163

Subject(s) - mosfet , cutoff frequency , electrical engineering , electronic engineering , microwave , optoelectronics , inversion (geology) , materials science , engineering , telecommunications , transistor , voltage , paleontology , structural basin , biology

This letter compares experimentally the performance of the SOS junctionless MOSFET and the conventional SOS inversion‐channel MOSFET, fabricated in a production line technology. It was shown that the former has a significantly higher cutoff frequency f T , and therefore presents a viable alternative to a conventional SOS MOSFETs for high‐speed integrated circuits. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2755–2757, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27163

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