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3.5 GHz WiMAX GaN doherty power amplifier with second harmonic tuning
Author(s) -
Fang Jie,
Moreno Jorge,
Quaglia Roberto,
Camarchia Vittorio,
Pirola Marco,
Guerrieri Simona Donati,
Ramella Chiara,
Ghione Giovanni
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27132
Subject(s) - amplifier , predistortion , doherty amplifier , wimax , electrical engineering , linear amplifier , rf power amplifier , power added efficiency , high electron mobility transistor , electronic engineering , microwave , engineering , baseband , transistor , materials science , optoelectronics , telecommunications , wireless , voltage , cmos
The article presents the design, realization, and experimental validation of a GaN‐based hybrid Doherty power amplifier for WiMAX base‐stations at 3.5 GHz. The amplifier exploits, for the first time as far as authors' knowledge goes, a second harmonic tuning scheme designed to further improve the efficiency in the Doherty region. The amplifier is based on a packaged GaN HEMT from Cree, and shows a saturated output power exceeding 43.2 dBm (21.5 W), a Doherty high‐efficiency region in excess of 6 dB output back‐off, with a first peak and maximum drain efficiency at saturation of 55 and 61%, respectively. The amplifier, with baseband digital predistortion, is compliant with the standard emission mask in the presence of a 9 dB peak to average power ratio WiMAX input and exhibits a weighted efficiency as high as 40%. The performances of the designed amplifier favorably compare with the state of the art for the same application. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2601–2605, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27132