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X‐Band GaAs mmic high power amplifier for transmitter space module
Author(s) -
Giofre Rocco,
Colantonio Paolo,
Giannini Franco,
Piazzon Luca
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27109
Subject(s) - amplifier , monolithic microwave integrated circuit , electrical engineering , microwave , engineering , transmitter , rf power amplifier , power (physics) , phased array , ripple , materials science , optoelectronics , electronic engineering , physics , telecommunications , antenna (radio) , voltage , cmos , channel (broadcasting) , quantum mechanics
In this letter, the design, realization, and test of an X‐band GaAs microwave monolithic integrated circuit high power amplifier (HPA) are reported.The HPA is designed in a two stage configuration to fully match a 50 Ω input and output impedance. Experimental results show that the HPA reaches an output power higher than 38 dBm with a gain higher than 17 dB and a ripple lower than 0.5 dB from 9 to 10.2 GHz frequency range. The power added efficiency is around 40%. The good level of performance and the low sensitivity to the environment temperature make this amplifier an excellent candidate for X band applications in phased array active antennas. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2633–2635, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27109