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Highly efficient unsymmetrical doherty power amplifier with DPD for LTE application
Author(s) -
Xia Jing,
Zhu Xiaowei
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27043
Subject(s) - dbc , predistortion , amplifier , adjacent channel , electrical engineering , microwave , adjacent channel power ratio , dbm , bandwidth (computing) , power (physics) , doherty amplifier , materials science , power bandwidth , rf power amplifier , electronic engineering , engineering , optoelectronics , telecommunications , physics , cmos , quantum mechanics
This article presents a highly efficient Doherty power amplifier (DPA) with 4.4% relative signal bandwidth for long‐term evolution (LTE) application at frequency band of 450–470 MHz.To maintain high efficiency at large back‐off power (BOP), the DPA is unsymmetrical and the carrier and peaking amplifiers are implemented to show unequal saturation power. Experimental results using continuous wave signal indicate a power‐added efficiency (PAE) of 64.3% at saturation power of 49.9 dBm and a PAE of 62% at about 6‐dB BOP. For 20 MHz LTE signal, the adjacent channel leakage ratio is −30 dBc and can be improved to −49 dBc by using the digital predistortion technique at an average output power of 41.5 dBm with a PAE of 51%. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2352–2356, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27043