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Bias and geometry optimization of silicon nanowire transistor: Radio frequency stability perspective
Author(s) -
Sivasankaran K.,
Kannadassan D.,
Seetaram K.,
Mallick P. S.
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27016
Subject(s) - stability (learning theory) , microwave , transistor , radio frequency , nanowire , perspective (graphical) , materials science , silicon , optoelectronics , electronic engineering , electrical engineering , engineering , computer science , geometry , telecommunications , mathematics , voltage , machine learning
This article presents structure and bias optimization techniques for the radio frequency (RF) stability of silicon nanowire transistor. The RF parameters are extracted using device simulation. The device stability is obtained for various bias conditions and geometry, and observed that the proposed device structure shows good stability response. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2114–2117, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27016