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Measurement of the paraelectric property of bulk ferroelectrics under high DC bias at microwave frequencies
Author(s) -
Wu C.Y.,
Wang T.,
Ren A.K.
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26844
Subject(s) - microwave , microstrip , capacitor , materials science , dielectric , dc bias , stub (electronics) , biasing , optoelectronics , electrical engineering , electronic engineering , voltage , engineering , telecommunications
A microstrip‐based test fixture that can measure the paraelectric property of bulk ferroelectrics under high DC bias up to 2 kV at microwave frequencies is presented.In the measurement, a rectangular‐cuboid ferroelectrics with a pair of electrodes at opposite sides which represents a lumped capacitor is placed between a gap of a microstrip line. Blocking capacitors and a‐quarter‐wavelength stub lines are used to make sure that the vector network analyzer is double safe in the presence of high voltage. Thru‐reflect‐line calibration method is used to de‐embed the ferroelectric capacitor from blocking circuits and DC bias networks. The simulation and measurement results indicate that the method is suitable and safe for measuring the paraelectric property of bulk ferroelectrics at microwave frequencies under high DC bias. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1493–1496, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26844