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A 30–65 GHz wideband double‐balanced gilbert‐cell mixer using GaAs pHEMT technology
Author(s) -
Kao HsuanLing,
Ke J.Y.,
Yeh C. S.,
Chiu HsienChin,
Fu Jeffrey S.
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26773
Subject(s) - wideband , balun , microwave , high electron mobility transistor , electrical engineering , monolithic microwave integrated circuit , extremely high frequency , optoelectronics , materials science , chip , gilbert cell , noise figure , intermediate frequency , engineering , voltage , radio frequency , physics , telecommunications , transistor , cmos , amplifier , antenna (radio)
This article presents a wideband, double‐balanced microwave/millimeter‐wave Gilbert‐cell mixer, using 0.15 μm GaAs pHEMT technology. Two baluns and a matching network are used in RF‐ and LO‐ports to convert single‐ended signals to differential signals, for wideband use. This mixer demonstrates an average conversion gain is 2.22 ± 1.5 dB at P LO = 2 dBm, from 30 to 65 GHz. The LO‐to‐RF and LO‐to‐IF isolations are all better than 28 dB, between 30 and 65 GHz. The measured P1dB and IIP3 are 5 dBm at 40 GHz and 10 dBm at 60 GHz, respectively. The mixer occupies a chip area, including probing pads, of 1.68 mm 2 and consumes 21 mA, with a supply voltage of 5V. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1196–1200, 2012
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