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BIAS‐free analog predistorters with L‐TYPE attenuator for RF power amplifiers
Author(s) -
Jhang JyunYuan,
Hsue Thomas,
Jang ShengLyang
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26712
Subject(s) - attenuator (electronics) , intermodulation , amplifier , electrical engineering , schottky diode , rf power amplifier , predistortion , insertion loss , electronic engineering , materials science , diode , engineering , attenuation , physics , cmos , optics
Parallel forward‐reverse Schottky‐diode paths and a L‐type attenuator form a bias‐free predistorter that effectively reduces the intermodulation distortion of an RF power amplifier.The predistorter exhibits a constant insertion loss at the low input power and its insertion loss decreases when the input power increases. The resistor in the L‐type attenuator serves as the transmission path when the input power is small. When the input power is large, on the other hand, the diode paths are activated to serve as the linearization vehicle for the predistorter. An improvement of extended operating power level up to 5 dB with the limit of −30 dBm adjacent‐channel leakage power is obtained for a 5‐watt amplifier at 1.9 GHz. Measured results are presented to illustrate the effectiveness of the predistorter. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:920–923, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26712