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A silicon quasi‐DOS based on reverse‐biased pn diode
Author(s) -
Zhao Yong,
Shao Haifeng,
Hu Ting,
Yu Ping,
Yang Jianyi,
Wang Minghua,
Jiang Xiaoqing
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26618
Subject(s) - diode , microwave , reverse bias , silicon , optoelectronics , materials science , waveguide , interference (communication) , optics , electrical engineering , physics , telecommunications , computer science , engineering , channel (broadcasting)
An interference‐type silicon waveguide device, which uses the particularity of the overlap between the optical field and the depletion layer in the reverse‐biased pn diode, has presented a “digital” response characteristic. Using this characteristic, a quasi‐digital optical switch is proposed and discussed. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:635–638, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26618