A silicon quasi‐DOS based on reverse‐biased pn diode | Zendy

Zhao Yong | Zendy; Shao Haifeng | Zendy; Hu Ting | Zendy; Yu Ping | Zendy; Yang Jianyi | Zendy; Wang Minghua | Zendy; Jiang Xiaoqing | Zendy

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A silicon quasi‐DOS based on reverse‐biased pn diode

Author(s) -

Zhao Yong,

Shao Haifeng,

Hu Ting,

Yu Ping,

Yang Jianyi,

Wang Minghua,

Jiang Xiaoqing

Publication year - 2012

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.26618

Subject(s) - diode , microwave , reverse bias , silicon , optoelectronics , materials science , waveguide , interference (communication) , optics , electrical engineering , physics , telecommunications , computer science , engineering , channel (broadcasting)

An interference‐type silicon waveguide device, which uses the particularity of the overlap between the optical field and the depletion layer in the reverse‐biased pn diode, has presented a “digital” response characteristic. Using this characteristic, a quasi‐digital optical switch is proposed and discussed. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:635–638, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26618

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