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The design and realization of high‐efficiency power amplifier with drain efficiency over 80% at 3.5 GHz
Author(s) -
Lei Qi,
You Fei,
Dong Lei,
He Songbai,
Hu Zhebin
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26577
Subject(s) - amplifier , predistortion , adjacent channel , electrical engineering , power added efficiency , dbc , dbm , rf power amplifier , wideband , microwave , adjacent channel power ratio , bandwidth (computing) , power bandwidth , linear amplifier , power (physics) , materials science , engineering , electronic engineering , physics , telecommunications , cmos , quantum mechanics
This article presents the full design methodology and implementation of inverse Class‐F power amplifier with a commercial high‐power GaN HEMT. For a 3.48 GHz continuous wave signal, the measurement results show state‐of‐the‐art power‐added‐efficiency (PAE) of 76.7%, drain efficiency of 81.1%, gain of 12.9 dB, and output power of 39.9 dBm. Within a bandwidth of 200 MHz, drain efficiency and output power are maintained above 60% and 38.5 dBm, respectively. With digital predistortion, it achieves −45 dBc of adjacent channel leakage ratio for a 2.5 MHz wideband signal with a peak‐to‐average power ratio of 8.9 dB, with an average PAE of 36.7%. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:521–525, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26577
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