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A series peaked g m ‐boosted 3.1–10.6 GHz CMOS CG UWB LNA for WiMedia
Author(s) -
Khurram Muhammad,
Rezaul Hasan S. M.
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26573
Subject(s) - noise figure , cmos , transconductance , electrical engineering , ranging , return loss , electronic engineering , amplifier , low noise amplifier , telecommunications , topology (electrical circuits) , engineering , transistor , voltage , antenna (radio)
An improved low noise amplifier (LNA) architecture is presented for WiMedia ultrawideband radio frequency frontend.The LNA topology addresses the issue of noise reduction keeping the power consumption to a minimum by employing the transconductance “ g m ” boosted common gate (CG) LNA topology with series peaking, operating in the WiMedia spectrum. This CG LNA utilizes an active g m ‐boosting stage where the bias current is shared between the g m ‐boosting stage and the self‐biased CG amplifying stage. In conjunction with an LC T‐network to further reduce the noise figure (NF) of the CG stage with finite output conductance ( g ds ), inductive series peaking is used to widen the operating pass‐band. The proposed LNA is designed using the 130 nm IBM CMOS process and achieved an input return loss ( S 11 ) and an output return loss ( S 22 ) of −10 dB and −14 dB, respectively. The LNA exhibits forward power gain ( S 21 ) of around 14 dB with a NF ranging between 3.5 and 4.1 dB. The complete chip dissipates 5 mW from a 1.0 V supply with an input referred third order intercept point (IIP3) and an input referred 1‐dB compression point (ICP 1dB ) of −4.8 dBm and −12.1 dBm, respectively. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:532–535, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26573