A 60‐GHz three‐stage low noise amplifier using 0.15‐μm gallium‐arsenic pseudomorphic high‐electron mobility transistor technology | Zendy

Hu ChihMin | Zendy; Hung ChungYu | Zendy; Chu ChunHsueh | Zendy; Chang DaChiang | Zendy; Juang YingZong | Zendy; Gong Jeng | Zendy; Huang ChihFang | Zendy; Chin ChihMin | Zendy

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A 60‐GHz three‐stage low noise amplifier using 0.15‐μm gallium‐arsenic pseudomorphic high‐electron mobility transistor technology

Author(s) -

Hu ChihMin,

Hung ChungYu,

Chu ChunHsueh,

Chang DaChiang,

Juang YingZong,

Gong Jeng,

Huang ChihFang,

Chin ChihMin

Publication year - 2012

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.26525

Subject(s) - amplifier , low noise amplifier , high electron mobility transistor , noise figure , transistor , materials science , optoelectronics , electrical engineering , microwave , cmos , voltage , engineering , telecommunications

A 60 GHz monolithic low‐noise amplifier (LNA) fabricated with 0.15‐μm gallium‐arsenic pseudomorphic high‐electron mobility transistors is presented.Using a three‐stage cascaded topology and in‐stage transmission lines, the LNA is designed using 5 V power supply voltage. Measured results of the LNA show the peak gain of 13.5 dB and the lowest noise figure of 5.15 dB around 61 GHz, and the 1 dB compression point (P 1dB ) of the LNA is −10 dBm. The LNA also demonstrates a complete design flow for millimeter‐wave applications. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 54:329–332, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26525

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