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A dual‐resonance injection‐locked frequency doubler in 0.18 μm CMOS technology
Author(s) -
Jang ShengLyang,
Chang ChiaWei,
Huang ChongWei,
Hsue ChingWen
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26501
Subject(s) - balun , electrical engineering , voltage doubler , frequency multiplier , cmos , transformer , microwave , materials science , optoelectronics , engineering , voltage , electronic engineering , telecommunications , voltage source , antenna (radio) , dropout voltage
This article proposes a dual‐resonance CMOS LC‐tank injection‐locked frequency doubler (ILFD) fabricated in the 0.18 μm CMOS process and describes the circuit design, operation principle, and measurement results of the ILFD. The ILFD circuit is composed of a dual‐resonance first‐harmonic injection‐locked oscillator with dual‐injection ports, a wide‐band frequency doubler, and a transformer balun. At the supply voltage of 0.7 V, the dc power consumption is 5.39 mW. At the incident power of 0 dBm, the ILFD has high/low operation range from the incident frequency 3.9/1.7 to 6.1/2 GHz to provide a dual‐band signal source with the frequency 7.8/3.4–12.2/4 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:193–196, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26501