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Process and temperature insensitive CMOS oscillator using current sinker compensation
Author(s) -
Kim M.,
Jung S.,
Yang Y.
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26493
Subject(s) - ring oscillator , compensation (psychology) , cmos , delay line oscillator , biasing , process corners , vackář oscillator , microwave , electrical engineering , voltage , materials science , optoelectronics , process variation , voltage controlled oscillator , electronic engineering , engineering , telecommunications , psychology , psychoanalysis
This article presents a simple complementary metal‐oxide‐semiconductor (CMOS) ring oscillator using a voltage‐controlled delay and RS‐latch, including a compensation circuit for the process and temperature variations.The compensation circuit, added to the original bias circuit, is a simple current sinker which is referenced through a current mirror circuit. The proposed oscillator was designed and implemented using a 0.13 μm CMOS process. The oscillator exhibited a significantly improved frequency variation of ±4.25% for a wide temperature range of from −40 to 80°C. Without the compensation circuit, the variation would have been ±13.39% from the center frequency of 2.33 MHz. The oscillator also showed a low sensitivity of 0.084% to process variation, according to a Monte‐Carlo simulation with 1000 iterations. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:160–163, 2012, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26493
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