A low‐loss planar goubau line and a coplanar‐PGL transition on high‐resistivity silicon substrate in the 57–64 GHz band | Zendy

Emond J. | Zendy; Grzeskowiak M. | Zendy; Lissorgues G. | Zendy; Protat S. | Zendy; Deshours F. | Zendy; Richalot E. | Zendy; Picon O. | Zendy

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A low‐loss planar goubau line and a coplanar‐PGL transition on high‐resistivity silicon substrate in the 57–64 GHz band

Author(s) -

Emond J.,

Grzeskowiak M.,

Lissorgues G.,

Protat S.,

Deshours F.,

Richalot E.,

Picon O.

Publication year - 2012

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.26470

Subject(s) - attenuation , planar , microwave , silicon , materials science , substrate (aquarium) , coplanar waveguide , line (geometry) , electrical resistivity and conductivity , frequency band , optoelectronics , electrical engineering , optics , telecommunications , engineering , physics , computer science , mathematics , geology , geometry , oceanography , computer graphics (images) , antenna (radio)

Planar Goubau line (PGL) structures on high‐resistivity silicon are adapted to the 57–64 GHz frequency band. Simulations and measurements show a lower attenuation than with the coplanar line is obtained. Very low losses are attained with a measured average attenuation of 0.064 dB/mm on the whole band. To allow this measurement, coplanar‐PGL transitions have been optimized. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:164–168, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26470

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