Premium
A low‐loss planar goubau line and a coplanar‐PGL transition on high‐resistivity silicon substrate in the 57–64 GHz band
Author(s) -
Emond J.,
Grzeskowiak M.,
Lissorgues G.,
Protat S.,
Deshours F.,
Richalot E.,
Picon O.
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26470
Subject(s) - attenuation , planar , microwave , silicon , materials science , substrate (aquarium) , coplanar waveguide , line (geometry) , electrical resistivity and conductivity , frequency band , optoelectronics , electrical engineering , optics , telecommunications , engineering , physics , computer science , mathematics , geology , geometry , oceanography , computer graphics (images) , antenna (radio)
Planar Goubau line (PGL) structures on high‐resistivity silicon are adapted to the 57–64 GHz frequency band. Simulations and measurements show a lower attenuation than with the coplanar line is obtained. Very low losses are attained with a measured average attenuation of 0.064 dB/mm on the whole band. To allow this measurement, coplanar‐PGL transitions have been optimized. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:164–168, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26470