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A 0.6 V low‐power 3.5‐GHz CMOS low noise amplifier for WIMAX applications
Author(s) -
Tsai JengHan,
Lin YiJhang,
Yu HaoChun
Publication year - 2012
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26463
Subject(s) - electrical engineering , cmos , low noise amplifier , noise figure , amplifier , transistor , low voltage , wimax , power gain , electronic engineering , noise (video) , engineering , materials science , voltage , optoelectronics , computer science , telecommunications , wireless , image (mathematics) , artificial intelligence
Abstract In this letter, a low‐voltage and low‐power 3.5‐GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18‐μm MS/RF complementary metal‐oxide‐semiconductor field effect transistor (CMOS) technology. The complementary current‐reused topology is utilized to achieve low dc power consumption while maintaining reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V supply, the LNA achieves a small signal gain of 16.09 dB and a noise figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA, the MMIC has excellent FOM performance. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:145–147, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26463