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Switch‐mode power amplifier design method
Author(s) -
Božanić Mladen,
Sinha Saurabh
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26444
Subject(s) - amplifier , microwave , electronic engineering , mode (computer interface) , electrical engineering , power (physics) , node (physics) , engineering , process (computing) , computer science , telecommunications , physics , cmos , operating system , quantum mechanics , structural engineering
In this letter, it is shown that doctrines behind the devised switch‐mode design method investigated by means of simulations for 0.35‐μm technology are indeed technology node and application independent.Experimental results verifying this claim are presented for 180‐nm SiGe BiCMOS process. Furthermore, a possible expansion of the method is proposed for mm‐wave applications. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2724–2728, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26444