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A dual‐band RF front end for DVB‐H direct conversion receiver
Author(s) -
Jung Seung Hwan,
Eo Yunseong
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26438
Subject(s) - noise figure , rf front end , electrical engineering , digital video broadcasting , cmos , microwave , multi band device , amplifier , chip , transistor , direct conversion receiver , optoelectronics , materials science , radio frequency , physics , engineering , electronic engineering , telecommunications , antenna (radio) , detector , voltage
Abstract A dual‐band RF front end for the DVB‐H direct conversion receiver is implemented using 0.18‐μm CMOS technology. To achieve the low‐NF and high‐IIP3 performance, the LO stage of the passive mixer is optimized with respect to the transistor size and gate bias. The measured results show that the NF is below 4.8 dB and the IIP3 at low‐noise amplifier off state is above +3.5 dBm all over the bands. The chip size is 0.75 mm 2 excluding pads and the current consumption is 5.6 and 6 mA at 1.8 V supply, respectively. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2796–2799, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26438