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Dual‐band applicable CMOS PA with a switched inductor for 802.16e WiMAX application
Author(s) -
Jin Yoo Hyun,
Kyu Cho Moon,
Geun Kim Jeong,
Seong Eo Yun
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26437
Subject(s) - amplifier , multi band device , cmos , electrical engineering , dbm , inductor , wimax , microwave , transistor , power (physics) , linearity , materials science , engineering , electronic engineering , optoelectronics , telecommunications , physics , wireless , voltage , quantum mechanics , antenna (radio)
A 2.3/3.5 GHz dual‐band applicable CMOS power amplifier (PA) is implemented using 0.13‐μm CMOS process.To achieve the optimal dual‐band characteristics, a switched inductor is used for the driver amplifier (DA) load. To improve the PAE and linearity at back off power, class AB‐B combined PA transistor cell is used. The measured maximum output power P sat of the dual‐band PA is about 29 dBm and 28 dBm at 2.3 GHz and 3.5 GHz, respectively. The achieved EVM is −30 dB and −26 dB at 23 dBm output power for each band, respectively. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2799–2802, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26437