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Simulation of an operation of zinc oxide light‐emitting diodes
Author(s) -
Kowalczewski Piotr,
Kuc Maciej,
Piskorski Łukasz,
Sarzała Robert P.,
Nakwaski Wlodzimierz
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26175
Subject(s) - diode , optoelectronics , microwave , materials science , zinc , light emitting diode , thermal , current (fluid) , electronic band structure , electronic engineering , electrical engineering , physics , computer science , engineering , telecommunications , condensed matter physics , meteorology , metallurgy
The self‐consistent thermal–electrical model of the ZnO light‐emitting diode is presented. It may be used to determine the band structure of the diode, its quasi‐Fermi levels and two‐dimensional profiles of temperature, potential, carrier concentrations, and current densities. The model may also enable its structure optimization for various possible applications. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26175