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FET Frequency doubler with out‐of‐phase switchable output and application in balanced frequency doubler
Author(s) -
Yang Ning,
Caloz Christophe,
Wu Ke
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26172
Subject(s) - frequency multiplier , balun , voltage doubler , electrical engineering , microwave , transistor , phase (matter) , monolithic microwave integrated circuit , electronic engineering , engineering , physics , telecommunications , voltage , amplifier , cmos , quantum mechanics , antenna (radio) , voltage divider , dropout voltage
A field effect transistor (FET) frequency doubler, with 180° out‐of‐phase alternate output by switching the bias status of FET at pinch‐off ( V gg ≈ Vt ) or saturation ( V gg ≈ 0) is proposed.With such bias conditions, the former conducts in the positive half‐cycle of the input signal, while the latter conducts in the negative half‐cycle. Based on this concept, a new frequency doubler architecture is proposed. Without an input balun, it is more compact than conventional balanced frequency doubler. In addition, it provides an alternate doubler with differential output. To demonstrate this concept, a single‐ended 5–10 GHz doubler tested at the two bias conditions is designed and demonstrated experimentally to provide opposite‐phase outputs for the two cases. The output phase difference error is less than 4° and over 42‐dB fundamental frequency rejection is achieved. The conversion gain measured at 10 GHz is 2.5 dB for an input power of 5 dBm. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26172