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A band selected 3.1–30.1 GHz distributed amplifier in 0.18‐μm CMOS technology
Author(s) -
Feng WuShiung,
Wei ChienCheng,
Hsu HuiChen,
Chen ChiaHsun,
Chatterjee Prasenjit,
Kung Ling
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26139
Subject(s) - cmos , electrical engineering , biasing , amplifier , microwave , bandwidth (computing) , engineering , low noise amplifier , electronic engineering , voltage , telecommunications
A band‐selected 3.1–30.1 GHz CMOS distributed amplifier (DA) for extended UWB application is presented in this article. The proposed circuit was designed and fabricated with a 0.18‐μm CMOS technology. This circuit uses a sharpening technique to improve the frequency response from low‐pass to bandpass property, for the requirement of limited frequency band. This DA also adopts the inductive peaking technique to increase circuit's gain and bandwidth. This DA has a measured maximum power gain of 7.5 dB. The supply voltage and biasing current are 1.8 V and 28.6 mA, with total DC power of 51.48 mW. When compared with the standard DAs published over the past years, this circuit offers good abilities in band selectivity, acceptable power gain, low noise figures, and large‐signal performances. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26139