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High‐efficiency tapered distributed power amplifier with 2‐μm GaAs HBT process
Author(s) -
Xu Jian,
Wang ZhiGong,
Zhang Ying,
Ma Li
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26126
Subject(s) - heterojunction bipolar transistor , amplifier , power added efficiency , electrical engineering , flatness (cosmology) , bandwidth (computing) , microwave , optoelectronics , materials science , distributed amplifier , power gain , electronic engineering , engineering , transistor , bipolar junction transistor , rf power amplifier , cmos , telecommunications , physics , voltage , cosmology , quantum mechanics
An integrated power distributed amplifier, fabricated in a low‐cost 2‐μm GaAs heterojunction bipolar transistor (HBT) technology, is implemented in this letter. A tapered collector line structure combined with the input capacitive coupling technique is used to improve the bandwidth and power efficiency simultaneously. The measurement results give a gain of 8.1dB with a gain flatness of ±0.5dB over a frequency range from 1 to 12 GHz. The output 1‐dB compressing point is 13.9 dBm at 5 GHz and the associated power‐added efficiency is 21.9%. Our work presents very good figure of merit among the recently published distribution amplifiers with different technologies. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26126