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Lasing wavelength shift of ASE‐injected wavelength‐locked F‐P LD in WDM‐PON
Author(s) -
Meng Hongyun,
Zhang Guanbin,
Wang Wei,
Lee ChangHee
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26088
Subject(s) - wavelength , lasing threshold , amplified spontaneous emission , wavelength division multiplexing , optoelectronics , optics , laser , microwave , laser diode , diode , materials science , physics , quantum mechanics
The lasing wavelength shift characteristics of amplified spontaneous emission (ASE)‐injected wavelength‐locked Fabry‐Perot laser‐diodes used in the wavelength division multiplexed passive optical network are studied. The lasing wavelength shift at different injected‐ASE powers and different bias currents are experimentally evaluated. The saturation effect has been found as the bias current increases. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26088