CMOS 45‐nm 3D metal‐oxide‐metal capacitors for millimeter wave applications | Zendy

Quémerais Thomas | Zendy; Moquillon Laurence | Zendy; Benech Philippe | Zendy; Fournier JeanMichel | Zendy; Pruvost Sébastien | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

CMOS 45‐nm 3D metal‐oxide‐metal capacitors for millimeter wave applications

Author(s) -

Quémerais Thomas,

Moquillon Laurence,

Benech Philippe,

Fournier JeanMichel,

Pruvost Sébastien

Publication year - 2011

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.26029

Subject(s) - capacitor , cmos , microwave , capacitance , materials science , extremely high frequency , oxide , metal , optoelectronics , millimeter , electrical engineering , electronic engineering , engineering , telecommunications , metallurgy , physics , optics , voltage , electrode , quantum mechanics

Novel 3D metal‐oxide‐metal capacitors for 60 GHz applications in a CMOS 45 nm process are proposed. Relatively high capacitances density of 3 fF/μm 2 and quality factors from 3.2 to 10.2 at 60 GHz are measured. The study is validated up to 110 GHz for different capacitance values. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26029

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research