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CMOS 45‐nm 3D metal‐oxide‐metal capacitors for millimeter wave applications
Author(s) -
Quémerais Thomas,
Moquillon Laurence,
Benech Philippe,
Fournier JeanMichel,
Pruvost Sébastien
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26029
Subject(s) - capacitor , cmos , microwave , capacitance , materials science , extremely high frequency , oxide , metal , optoelectronics , millimeter , electrical engineering , electronic engineering , engineering , telecommunications , metallurgy , physics , optics , voltage , electrode , quantum mechanics
Novel 3D metal‐oxide‐metal capacitors for 60 GHz applications in a CMOS 45 nm process are proposed. Relatively high capacitances density of 3 fF/μm 2 and quality factors from 3.2 to 10.2 at 60 GHz are measured. The study is validated up to 110 GHz for different capacitance values. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26029