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Effect of composited‐layer Al y Ga 1‐y N on performances of AlGaN/GaN HEMT with unintentionally doping barrier Al x Ga 1‐x N
Author(s) -
Cheng Zhiqun,
Hu Sha,
Zhou Weijian,
Liu Jun
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.26004
Subject(s) - high electron mobility transistor , doping , materials science , barrier layer , microwave , optoelectronics , semiconductor , electric field , layer (electronics) , electrical engineering , nanotechnology , physics , transistor , telecommunications , computer science , voltage , quantum mechanics , engineering
A novel structure A x Ga 1‐x N/AlN/Al y Ga 1‐y N/GaN HEMT with composited‐layer and unintentionally doping barrier was designed for high linearity. The effect of two‐dimensional electron gas (2DEG) and electric field on device structure parameter is obtained from the self‐consistent solution basing on theory of semiconductor energy band and quantum well. Combining with results of theory analysis and TCAD software simulation results, the optimization structure Al 0.27 Ga 0.73 N/AlN/Al 0.04 Ga 0.96 N/GaN HEMT was proposed. And A x Ga 1‐x N/AlN/GaN HEMT without composited‐ layer and unintentionally doping barrier was designed together for comparison. Both devices with gate length of 0.3 μm and gate width of 200 μm were fabricated. Measured results show proposed A x Ga 1‐x N/AlN/Al y Ga 1‐y N/GaN HEMT has better performances of linearity, gain, and power added efficiency (PAE) than A x Ga 1‐x N/AlN/GaN HEMT. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1206–1209, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26004