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An empirical I ‐ V nonlinear model suitable for GaN FET class F PA design
Author(s) -
GarcíaOsorio A.,
LooYau J. R.,
ReynosoHernández J. A.,
OrtegaC. Susana,
del VallePadilla J. L.
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25980
Subject(s) - microwave , nonlinear system , conductance , spice , transistor , voltage , electronic engineering , inverse , nonlinear model , saturation (graph theory) , optoelectronics , electrical engineering , physics , materials science , computational physics , engineering , mathematics , condensed matter physics , quantum mechanics , geometry , combinatorics
This article presents an improved nonlinear I DS ( V GS , V DS ) model useful for modeling the experimental pulsed I ‐ V measurement data of GaN FETs operated at large drain‐source voltages. This improved I DS ( V GS , V DS ) model is based on the Chalmers model. The main features of the improved nonlinear I DS ( V GS , V DS ) model are the two analytical expressions that are incorporated to model the output conductance and the saturation voltage. The new model only requires 13 parameters easily determined from experimental pulsed I ‐ V data. Comparison between simulated and measured data of an inverse class F PA designed with a commercial GaN FET at 1.5 GHz demonstrate that the proposed model is suitable for microwave circuit design based on GaN transistors. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1256–1259, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25980
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