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Chip design of an UWB and high gain on‐chip transformer receiver front‐end
Author(s) -
Huang JhinFang,
Shie PeiJiuan,
Liu RonYi
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25956
Subject(s) - noise figure , balun , electrical engineering , chip , transformer , amplifier , intermediate frequency , cmos , return loss , rf front end , microwave , low noise amplifier , wideband , materials science , voltage , optoelectronics , engineering , radio frequency , telecommunications , antenna (radio)
An ultra‐wideband receiver front‐end operating in 3.1–8.0 GHz frequency range is presented. The proposed front‐end consists of on‐chip transformer low‐noise amplifier, passive balun, double‐balanced mixer, and is fabricated in a TSMC 0.18 μm CMOS process with 1.8 V supply voltage. Measured results show that maximum conversion gain of 30.32 dB, noise figure less than 5.9 dB, input return loss ( S 11 ) smaller than −15.3 dB, input‐referred third‐order intercept point of −21.4 dBm, 1 dB compression point ( P 1 dB ) of −30 dBm over the whole frequency range of interest are achieved. In addition, isolations of LO to RF and LO to IF are less than −57 dB and −27.8 dB, respectively, chip area including pads is only 0.985 mm 2 and power dissipation is 36.88 mW. The realized front‐end achieves the smallest chip area and the best merit of figure compared with previously reported front‐ends. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1422–1427, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25956