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A high‐isolation switch based on a standard GaAs process
Author(s) -
Zhurbenko Vitaliy
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25906
Subject(s) - microwave , wideband , isolation (microbiology) , insertion loss , electrical engineering , port (circuit theory) , engineering , electronic engineering , monolithic microwave integrated circuit , telecommunications , amplifier , microbiology and biotechnology , cmos , biology
The design and evaluation of an ultra‐wideband nonreflective single port single throw switch integrated circuit is described. The switch has a measured insertion loss of <1.2 dB and isolation of typically better than 70 dB from DC to 10 GHz. The developed circuit is intended for implementation in ultra‐wideband microwave instruments and systems requiring high level of isolation. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:984–987, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25906