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A new differential stacked spiral inductor with improved self‐resonance frequency
Author(s) -
Kim Joonchul,
Nam Byungjae,
Kim Hyeongdong
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25900
Subject(s) - microwave , nanotechnology , engineering , materials science , telecommunications
A new silicon‐based differential stacked spiral inductor (DSSI) was implemented using a standard 0.18‐μm complimentary metal‐oxide semiconductor technology. Based on the measured two‐port S ‐parameter using a standard de‐embedding procedure, the self‐resonance frequency, f sr , and quality factor, Q , of the new DSSI were compared with a conventional DSSI. The f sr of the new DSSI was nearly twice as high as that of the conventional DSSI, and the Q value of the new DSSI was also enhanced. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1024–1026, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25900