A new differential stacked spiral inductor with improved self‐resonance frequency | Zendy

Kim Joonchul | Zendy; Nam Byungjae | Zendy; Kim Hyeongdong | Zendy

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A new differential stacked spiral inductor with improved self‐resonance frequency

Author(s) -

Kim Joonchul,

Nam Byungjae,

Kim Hyeongdong

Publication year - 2011

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.25900

Subject(s) - microwave , nanotechnology , engineering , materials science , telecommunications

A new silicon‐based differential stacked spiral inductor (DSSI) was implemented using a standard 0.18‐μm complimentary metal‐oxide semiconductor technology. Based on the measured two‐port S ‐parameter using a standard de‐embedding procedure, the self‐resonance frequency, f sr , and quality factor, Q , of the new DSSI were compared with a conventional DSSI. The f sr of the new DSSI was nearly twice as high as that of the conventional DSSI, and the Q value of the new DSSI was also enhanced. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1024–1026, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25900

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