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High‐integrated and small‐sized X‐band image rejection down‐converter MMIC using InGaP/GaAs HBT process
Author(s) -
Wang Cong,
Kim NamYoung
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25852
Subject(s) - image response , monolithic microwave integrated circuit , heterojunction bipolar transistor , electrical engineering , microwave , polyphase system , amplifier , local oscillator , broadband , materials science , optoelectronics , electronic engineering , engineering , intermediate frequency , voltage , radio frequency , transistor , telecommunications , cmos , bipolar junction transistor
A fully differential X‐band image rejection down‐converter is fabricated using Hartley architecture with a total chip area of 2.6 × 1.1 mm 2 in InGaP/GaAs HBT monolithic microwave integrated circuit technology.This down‐converter consists of two single‐balanced mixers, a differential intermediate frequency (IF) amplifier, a local oscillator quadrature generator, a three‐stage polyphase filter, and a differential voltage‐controlled oscillator. This down‐converter yields an image rejection ratio of over 30 dB, a conversion gain of over 30 dB, a noise figure of less than 3.5 dB, and an output‐referred 1 dB compression power (P1 dB,OUT ) of 2.5 dBm in the IF range 0.9‐2 GHz. The broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 35 mA are achieved. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:789–793, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25852
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