Premium
Accurate large‐signal characterization of LDMOSFET transistor in package
Author(s) -
Tamoum Mohammed,
Allam Rachid,
Djahli Farid
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25800
Subject(s) - transistor , amplifier , characterization (materials science) , signal (programming language) , materials science , microwave , power (physics) , electronic engineering , chip , semiconductor , electrical engineering , optoelectronics , computer science , engineering , cmos , physics , voltage , nanotechnology , telecommunications , quantum mechanics , programming language
In this article, we present an accurate characterization of the RF LDMOSFET transistors for the extracting of the large‐signal model. They are generally available encapsulated in package. A measurement of the package parameters are made only by removing the semiconductor chip. The transistor is then characterized by conventional method. The same component can be used in the desired function, thereby avoiding the technological dispersions. The LDMOSFET transistor used is a BLF2043F (NXP semiconductors). To validate our method, we implemented a 2.5‐GHz 10‐W power amplifier. The measured and simulated results match very well. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:575–579, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25800