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A K‐band balanced subharmonically pumped image rejection mixer using 0.15‐μm GaAs pHEMT technology
Author(s) -
Ke PoYu,
Chiu HsienChin,
Kuo CheYu,
Fu Jeffrey S.,
Chiang YiChyun
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25781
Subject(s) - image response , microwave , diode , high electron mobility transistor , electrical engineering , optoelectronics , intermediate frequency , local oscillator , materials science , monolithic microwave integrated circuit , port (circuit theory) , frequency mixer , balun , optics , radio frequency , physics , engineering , voltage , amplifier , telecommunications , cmos , transistor , antenna (radio)
This work presents a K‐band balance single side‐band subharmonically pumped image rejection diode mixer (SHIRM).It uses lumped elements and three‐conductor‐line quadrature couplers and is fabricated in a 0.15‐μm GaAs process. The SHIRM is realized in size reduction by using two antiparallel diode pairs for frequency mixing. The three‐conductor‐line bending coupler is 55% reduction in size compared to the nonbending one for radio frequency port, and lumped elements realization is 62% smaller in size than the quarter‐wavelength line for local oscillator port. The proposed circuit with a symmetric layout provides good matches on amplitude and phase performances. The measured results exhibit a minimum conversion loss of 13 dB, a maximum image rejection ratio of 19 dB. All ports isolations are better than 10 dB. The chip area is only 1.5 × 1 mm 2 . © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:485–488, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25781