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Wide‐band ÷3 injection locked frequency divider in 0.35 μm SiGe BiCMOS
Author(s) -
Jang ShengLyang,
Hsu ChunWei,
Chang ChiaWei,
Hsue ChingWen
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25771
Subject(s) - frequency divider , electrical engineering , heterojunction bipolar transistor , materials science , optoelectronics , diode , microwave , inductor , voltage , silicon germanium , d band , voltage controlled oscillator , silicon , transistor , bipolar junction transistor , engineering , physics , cmos , telecommunications , optics , raman spectroscopy
A wide‐band ÷3 injection locked frequency divider (ILFD) has been proposed, and it is based on a single‐stage voltage‐controlled oscillator with active‐inductor and HBT diodes, and was fabricated in the 0.35 μm silicon‐germanium 3P3M BiCMOS technology. The ILFD has wide operation range and was performed by injecting a differential signal to the bases of the injection HBTs. At the supply voltage V DD = 1.8 V, the oscillation frequency of the ILFD with two tuning voltages is tunable from 4.17 to 2.12 GHz, and at the incident power of 0 dBm, the ÷3 operation range is 5.93 GHz, from the incident frequency 6.3 to 12.23 GHz. The die area is 0.59 × 0.63 mm 2 . © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:609–611, 2011; View this article at wileyonlinelibrary.com. DOI 10.1002/mop.25771
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