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A concurrent triple‐band CMOS low noise amplifier for fourth generation applications
Author(s) -
Jang Yohan,
Choi Jaehoon
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25743
Subject(s) - wimax , cascode , cmos , electrical engineering , low noise amplifier , noise figure , amplifier , microwave , electronic engineering , radio spectrum , inductor , resistive touchscreen , engineering , telecommunications , voltage , wireless
In this study, a concurrent triple‐band low noise amplifier (LNA) is designed for long term evolution (LTE), Mobile‐WiMAX (M‐WiMAX), and WiMAX services. The main topology of the proposed LNA is a cascode architecture with source degeneration using shunt resistive feedback topology for the triple‐resonance characteristic. The LNA is designed using a Taiwan Semiconduction Company (TSMC) 0.18 μm radio frequency CMOS process. To obtain the necessary gains over the operating frequency bands, a series LC branch is added in parallel with an inductor at the drain load of a single band LNA. The peak gains at LTE, M‐WiMAX, and WiMAX bands are 17.6, 14.7, and 14.5 dB, respectively, whereas dissipating 8 mA from a 1.4 V supply voltage. The average noise figure over the three operating frequency bands is 4.5 dB. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:415–418, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25743