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4.1 mW 50 dBΩ 10 Gbps transimpedance amplifier for optical receivers in 0.13 μm CMOS
Author(s) -
Ngo TrongHieu,
Lee TaeWoo,
Park HyoHoon
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25741
Subject(s) - transimpedance amplifier , cmos , electrical engineering , cascode , amplifier , bandwidth (computing) , broadband , photodiode , optoelectronics , gain–bandwidth product , figure of merit , microwave , electronic engineering , physics , engineering , materials science , operational amplifier , telecommunications
A transimpedance amplifier (TIA), using the combination of the shunt‐feedback topology with the regulated‐cascode input stage and broadband matching network, is designed and implemented in a 0.13‐μm CMOS technology. The proposed TIA achieves a 3‐dB bandwidth of 7.5 GHz, transimpedance gain of 50 dBΩ in the presence of 300 fF photodiode capacitance. It dissipates 4.1 mW from a 1.2 V supply voltage, and occupies a chip area without pads of 0.42 × 0.17 mm 2 . The TIA presents the highest gain‐bandwidth product per DC power figure of merit of 578 GHz Ω/mW compared with recently published TIAs. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:448–451, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25741