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Improved test structure for on‐wafer microwave characterization of components
Author(s) -
Descamps Philippe,
AbessoloBidzo Dolphin,
Poirier Patrick
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25738
Subject(s) - microwave , wafer , characterization (materials science) , electronic engineering , dependency (uml) , capacitor , substrate (aquarium) , materials science , engineering , optoelectronics , nanotechnology , electrical engineering , systems engineering , telecommunications , oceanography , voltage , geology
This article presents the impact of different test structures on the results of microwave characterization of on‐wafer components. In this study, we focus on the characterization and modeling of NXP Semiconductors Technology Passive Integration Connective Substrate (PICS) capacitor. First, we show the strong dependency of the extracted parameters according to test structure used when utilizing traditional open/short parasitic elements removing method. Second, we propose an optimization of the test structures to reduce their influence on the intrinsic parameters extracted from on‐wafer characterization of the device under test. We also propose a way to improve the accuracy of the modeling of PICS devices in radiofrequency and microwave domains. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:249–254, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25738