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CMOS injection‐locked frequency divider with two series‐LC resonators
Author(s) -
Jang ShengLyang,
Shih ChihChieh,
Liu ChengChen,
Juang MiinHorng
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25716
Subject(s) - frequency divider , nmos logic , resonator , electrical engineering , microwave , electronic oscillator , cmos , lc circuit , engineering , frequency band , injection locking , optoelectronics , voltage controlled oscillator , materials science , voltage , electronic engineering , transistor , physics , telecommunications , optics , capacitor , laser , antenna (radio)
A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.18‐μm CMOS process. The ILFD is realized with a cross‐coupled nMOS LC‐tank oscillator with a direct injection MOSFET and two series‐LC resonators. At the supply voltage of 0.8 V, the low‐band free‐running tuning frequency is from 2.7 to 3.18 GHz. One excited high‐band frequency band is measured, and the free‐running tuning frequency is from 4.07 to 4.13 GHz. The divide‐by‐2 operational locking range is from 3.4 to 9.4 GHz, and the divide‐by‐4 operational locking range is from 10.5 (15.95) GHz to 13.6 (16.9) GHz for the low‐(high)‐frequency band. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:290–293, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25716