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Design of high‐efficiency and broadband‐tuned class AB power amplifier
Author(s) -
Vatankhahghadim Aynaz,
Boumaiza Slim
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25710
Subject(s) - amplifier , broadband , electronic engineering , electrical engineering , transistor , power (physics) , dbm , engineering , harmonic , microwave , impedance matching , rf power amplifier , electrical impedance , computer science , telecommunications , physics , acoustics , voltage , cmos , quantum mechanics
The design of broadband matching networks (MNs) exploiting filter theory is presented in this article for synthesizing broadband and highly efficient power amplifiers (PAs).Starting from sets of optimum impedances over the design frequency (obtained from load/pull measurement), the MNs are designed using a systematic approach. The impact of the second harmonic termination on the transistor performance is investigated and used to optimize the power efficiency over broad frequency range. Two PAs were designed with the proposed methodology using 25‐W GaN device. The designs targeted the frequency bands of 1.8–2.2 GHz (20% BW) and 1.8–2.7 GHz (40% BW). The former achieved the drain efficiency (DE) of about 70% and output power of 45.5 dBm (±1 dB), whereas the latter delivered a DE of about 60% and output power of 45.5 dBm. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:395–398, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25710