Premium
K‐band power divider with metal bridge structures for size reduction using CMOS technology
Author(s) -
Yu HanYeol,
Choi SungSun,
Kim YongHoon
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25691
Subject(s) - wilkinson power divider , current divider , electrical engineering , power dividers and directional couplers , microwave , cmos , engineering , bandwidth (computing) , frequency divider , chip , electronic engineering , optoelectronics , telecommunications , materials science
A K‐band power divider with metal bridge structures, which is based on the Wilkinson type is proposed using a standard 0.18 μm CMOS process. The metal bridge structures are applied to the power divider to achieve small size. Additionally, slow‐wave structures such as meandered line and slot pattern ground are used for small chip size and high performance. The proposed power divider shows an improved slow‐wave factor of 8.2% compared with a power divider with the conventional meandered line structure. The proposed power divider presents a size of 306 × 296 μm and wide bandwidth of 58% for isolation <15 dB. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:379–381, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25691