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Compact modeling of silicon nanowire MOSFET for radio frequency applications
Author(s) -
Cho Seongjae,
Kim Kyung Rok,
Park ByungGook,
Kang In Man
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25686
Subject(s) - mosfet , microwave , materials science , radius , silicon , electronic engineering , radio frequency , nanowire , channel (broadcasting) , optoelectronics , electrical engineering , engineering , computer science , transistor , telecommunications , voltage , computer security
This article presents the radio frequency small‐signal modeling of silicon nanowire (SNW) MOSFET with 30 nm channel length and 5 nm channel radius. Analytical parameter extraction methods are developed by Y‐parameter analysis for the proposed equivalent circuit. Y‐parameters of SNW MOSFET are obtained by three‐dimensional (3D) device simulator. Accuracies of the new model and extracted parameters have been verified by the 3D device simulation data up to 200 GHz. The RMS modeling error of Y‐parameter was calculated to be only 1.4%. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:471–473, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25686