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Calculating the noise performance of a Ge‐on‐Si schottky photodetector
Author(s) -
Dutta Himadri Sekhar,
Das N. R.
Publication year - 2011
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25623
Subject(s) - photodetector , dark current , schottky barrier , optoelectronics , noise equivalent power , noise (video) , microwave , schottky diode , bandwidth (computing) , materials science , electrical engineering , physics , engineering , telecommunications , computer science , responsivity , diode , artificial intelligence , image (mathematics)
We present here a study on the noise performance of a Ge‐on‐Si resonant‐cavity‐enhanced schottky photodetector (PD). The present model for noise includes the effect of confinement of carriers at the Si/Ge heterointerface. Noise equivalent bandwidth, dark current, and minimum detectable power are computed. The results show that suitable choice of device dimensions and bias can be used to improve the noise performance of the PD in presence of heterointerface confinement. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:5–10, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25623